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1 |
Graphene functionalization and seeding for dielectric deposition and device integration |
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2 |
Understanding image contrast to optimize procedures for focused ion beam contact level circuit editing |
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3 |
Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation |
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4 |
Quantification of cesium surface contamination on silicon resulting from SIMS analysis |
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5 |
Enhanced green emission from UV down-converting Ce3+–Tb3+ co-activated ZnAl2O4 phosphor |
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6 |
UV capillary force lithography for multiscale structures |
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7 |
Impact of mask absorber thickness on the focus shift effect in extreme ultraviolet lithography |
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8 |
High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures |
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9 |
Analytical and experimental evaluation of a counting method for particles added during the mask handling process |
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10 |
Conformally coating vertically aligned carbon nanotube arrays using thermal decomposition of iron pentacarbonyl |
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11 |
Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene |
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12 |
Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene |
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13 |
Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane |
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14 |
Enormous shrinkage of carbon nanotubes by supersonic stress and low-acceleration electron beam irradiation |
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15 |
Graphene stripper foils |
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16 |
Surface functionalization of graphenelike materials by carbon monoxide atmospheric plasma treatment for improved wetting without structural degradation |
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17 |
Complementary voltage inverters with large noise margin based on carbon nanotube field-effect transistors with SiNx top-gate insulators |
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18 |
Structural and luminescent properties of bulk InAsSb |
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19 |
Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy |
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20 |
Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials |
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21 |
Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface |
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22 |
Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates |
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23 |
Electrical properties of C60 and Si codoped GaAs layers |
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24 |
Growth of GaSb1-xBix by molecular beam epitaxy |
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25 |
Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy |
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26 |
InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE |
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27 |
Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy |
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28 |
Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-face n-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers |
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29 |
Magnetic anisotropy of GaAs/Fe/Au core-shell nanowires grown by MBE |
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30 |
Molecular beam epitaxy control and photoluminescence properties of InAsBi |
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31 |
Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit |
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32 |
Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates |
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33 |
Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111) |
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34 |
Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates |
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