PROJECT TITLE :

A Low-Power Robust Easily Cascaded Penta MTJ-Based Combinational and Sequential Circuits - 2016

ABSTRACT:

Advanced computing systems embed spintronic devices to boost the leakage performance of standard CMOS systems. High speed, low power, and infinite endurance are necessary properties of magnetic tunnel junction (MTJ), a spintronic device, which assures its use in recollections and logic circuits. This paper presents a PentaMTJ-based logic gate, that provides straightforward cascading, self-referencing, less voltage headroom problem in precharge sense amplifier and low area overhead contrary to existing MTJ-based mostly gates. PentaMTJ is used here because it provides guaranteed disturbance free reading and increased tolerance to process variations along with compatibility with CMOS process. The logic gate is validated by simulation at the forty five-nm technology node employing a VerilogA model of the PentaMTJ.