PROJECT TITLE :

Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs

ABSTRACT:

We tend to explore the impact of varying channel thickness (from 8 to one.5 nm) on extraordinarily thin germanium n-MOSFETs, by explicitly incorporating the quantum confinement effects in the band structure calculations using the first principle density useful theory. In Ge (001) skinny films in the sub-ten-nm regime, the X valley becomes all-time low conduction band valley and is largely accountable for the charge transport as in silicon. Considering device parameters as per the international technology roadmap for semiconductors (ITRS) projected device specifications for the year 2024, we have a tendency to use the confinement-modulated effective mass to calculate the drain current employing the fully ballistic nonequilibrium Green's operate transport model. The most effective suited thickness for digital applications is found to be one.5 nm with subthreshold slope of eighty three.8 mV/decade, ION/IOFF of 1.8 × 104, and an ION exceeding ITRS targets.