PROJECT TITLE :

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

ABSTRACT:

The edge voltage shift ( $Delta V_textrm th$ ) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) throughout negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Varied N–In bonds eliminate donorlike subgap states near the Fermi level, that improve stability throughout stress however degrade electron mobility. We have a tendency to developed tandem TFTs with an a-IZTO:N layer on prime of an a-IZTO layer, in that mobility reaches thirty one.76 ± 0.81 cm2/Vs and the reliability is improved. Particularly, $Delta V_textrm th$ in NGBS is reduced by eighty% for pristine a-IZTO devices. This easy but an effective technique achieves quick and reliable operation in the a-IZTO TFTs.