PROJECT TITLE :

Plasma Enhanced Terahertz Rectification and Noise in InGaAs HEMTs

ABSTRACT:

In this work, we have a tendency to explore high frequency collective phenomena gift in InGaAs HEMTs that result in a peak in the present noise spectrum and enhance their DC response to THz signals, therefore originating a resonance within the rectification of AC signals. These phenomena have been evidenced in recent experiments, in which THz detection as a results of plasma wave resonances has been demonstrated. During this paper, by suggests that of Monte Carlo simulations, the noise spectra and the AC–DC rectification properties of the devices have been calculated and linked to the properties of the plasma oscillations inside 2 distinct components of the supply-gate region: the capped and also the recessed sections of the channel.