PROJECT TITLE :

Gate Capacitance Measurement Using a Self-Differential Charge-Based Capacitance Measurement Method

ABSTRACT:

In this letter, we tend to propose a self-differential charge-based mostly capacitance measurement(SDCBCM) method. It's specifically applied to measure MOSFET gate capacitance with high accuracy. SDCBCM has two main benefits. 1st, it employs a newly proposed self-differential method to derive the capacitance-voltage ( – ) curve of gate capacitance, therefore avoiding the amplification of systematic error during the differentiation. Second, it can operate at a terribly high frequency (five hundred MHz or additional), which for the first time permits the gate capacitance of actual operating frequency to be measured and reduces random error to a terribly low level. Compared with the previous work, the accuracy of our methodology is increased by tens of times.