PROJECT TITLE :

Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

ABSTRACT :

Throughout recent years, silicon carbide (SiC) power electronics has gone from being a promising future technology to being a potent various to state-of-the-art silicon (Si) technology in high-efficiency, highfrequency, and high-temperature applications. The reasons for this are that SiC power electronics might have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities. It's now a truth that several manufacturers are capable of developing and processing high-quality transistors at value that allow introduction of recent products in application areas where the advantages of the SiC technology will provide important system benefits.