PROJECT TITLE :

Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs

ABSTRACT:

During this paper, using a two-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowering, are taken beneath consideration while developing the model. A bandgap narrowing model has been utilized to analyze the impact of higher channel doping. The modeled results of the surface potential, electrical field, threshold voltage ( ), subthreshold slope, and drain current are verified by comparing with those of the ATLAS three-D device simulation. The influence of the drain radius and position of the supply/drain regions on the electrical characteristics of the device has additionally been demonstrated.