PROJECT TITLE :

Nb-Doped $hbox_hbox_ $ as Charge-Trapping Layer for Nonvolatile Memory Applications

ABSTRACT:

Charge-trapping properties of Nb-doped $hbox{La}_{2}hbox{O}_{3}$ (LaNbO) are investigated using an $hbox{Al/Al}_{2}hbox{O}_{3}/hbox{LaNbO/SiO}_{2}/hbox{Si} $ structure. Compared with the memory device with $hbox{La}_{2}hbox{O}_{3} $, the one with LaNbO shows better charge-trapping characteristics, including larger memory window (6.0 V at $pm hbox{16} $ V sweeping voltage), higher programming speed (9.1 V at $+hbox{16} $ V for 1 ms), and better retention property (94% charge retained after $hbox{10}^{4}$ s at $hbox{120} ^{circ}hboxDevice and Materials Reliability $) , due to its higher trapping efficiency resulted from increased trap density and suppressed formation of a silicate interlayer at the $hbox{LaNbO/SiO}_{2} $ interface by the Nb doping. Therefore, LaNbO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.