PROJECT TITLE :

Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences

ABSTRACT:

We have a tendency to gift a close analysis of hot-carrier degradation (HCD) in graphene field-impact transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, each the degradation mechanisms strongly interact. Explicit attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and also the universal relaxation perform for a few stress conditions, quite kind of like the BTI in each GFETs and Si technologies. The main results of this paper is an extension of our systematic methodology for benchmarking new graphene technologies for the case of HCD.