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Chip Warpage Induced by Tapered Through-Silicon Vias: A Numerical Analysis
PROJECT TITLE :
Chip Warpage Induced by Tapered Through-Silicon Vias: A Numerical Analysis
ABSTRACT:
This paper issues chip warpage caused by thermal expansion mismatch between tapered copper (Cu) through-silicon vias (TSVs) and the encompassing silicon (Si) matrix. Systematic numerical finite-element modeling is performed to simulate the periodic array of Cu TSVs. It is demonstrated that important chip curvature can develop as a result of the tapered TSV geometry. The results of taper angle, diameter, and density of TSVs; wafer thickness; and intermediate layers between Cu and Si are investigated.
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