PROJECT TITLE :

Enhancement in Output Power of Blue Nitride-Based Light-Emitting Diodes With an Electron Retarded Layer

ABSTRACT:

During this study, GaN-primarily based blue light-weight-emitting diodes (LEDs) with an electron retarded layer (ERL) were investigated and demonstrated. The external quantum potency (EQE) and efficiency droop result can be effectively improved by introducing the ERL which was attributed to the retard of the electrons rejected into the multiple quantum wells (MQWs). Thus, the electron overflow result can be effectively suppressed and carrier distribution can become a lot of uniform in the MQWs. Regarding the thermal effect, the new-cold factors of LEDs with ERL can achieve a higher performance because of the carrier uniform distribution in the MQWs, which isn't simply influenced by the temperature. On the other hand, the temperature dependence of the electroluminescence (EL) of LEDs with ERL conjointly can exhibit a better property particularly at lower temperature.