PROJECT TITLE :

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

ABSTRACT:

We tend to report the electrical characteristics of backchannel etch (BCE) metal-oxide-semiconductor skinny-film transistor (TFT) comprised of aluminum-doped tin-zinc-indium oxide (ATZIO). It has high etch selectivity in wet chemical etchants, that comprises H3PO4, CH3COOH, and HNO3. This is contrary to the conventional metal-oxide-semiconductors of indium-gallium-zinc oxides, that are highly soluble within the acidic chemicals. Thus, no etch stop layer is required to safeguard the backchannel from the wet etchant injury during the source and drain patterning in the bottom-gate-staggered TFT structure. This provides the chance of oxide TFT fabrication method made as simple as that of the current amorphous silicon TFT using 3 or four photomasks with short channel length and fewer parasitic capacitance. The electrical characteristics of our ATZIO BCE-TFTs have the mobility of 21.4 cm2/V · s, subthreshold swing (S.S) of 0.eleven V/decade, and threshold voltage of zero.eight V. In spite of the BCE structure, they have wonderful stability against bias temperature stress, that shows the edge voltage shifts of +0.75 V and -0.fifty one V below the prolonged positive (+twenty V) and negative (-twenty V) gate bias stresses for 10 000 s at sixty °C, respectively.