PROJECT TITLE :

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices

ABSTRACT:

The influence of 2 completely different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOX-primarily based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode below the identical operational conditions for all reset stop voltages ( $V_text reset-stop)$ throughout each the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, ensuing in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher $R_mathrmscriptscriptstyle OFF/R_mathrmscriptscriptstyle ON(> ten^3)$ with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOX/Pt ReRAM device. An wonderful retention for these eight states is demonstrated at 125 °C for $ten^4$ s. Furthermore, the TaOX ReRAM device with each the electrodes shows high endurance up to $10^6$ cycles based mostly on 2 states.