PROJECT TITLE :

Toward Linearity in Schottky Barrier CNTFETs

ABSTRACT:

Carbon nanotube field-result transistors are expected to be useful for analog high-frequency applications due to, among others, their inherent linearity and, therefore, terribly low signal distortion. Achieving this linearity has therefore so much been assumed to depend on meeting the following conditions: Ballistic single-subband transport, ohmic contacts, and quantum capacitance limited operation1. But, these conditions are terribly troublesome to fulfill in realistic devices and circuit applications. It is shown in this paper that high linearity is additionally possible underneath significantly relaxed and, in explicit, a lot of practical conditions. This paves the means toward the exploration of linearity in realistic devices stricken by carrier scattering in the channel and with Schottky-like contacts, furthermore thicker and lower-$kappa$ gate oxides, that do not enable operation within the quantum capacitance limit. This study is based on results obtained with a Boltzmann transport equation solver that includes tunneling through potential barriers.